Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs

被引：10

作者：

De la Torre, J

Souifi, A

Lemiti, M

Poncet, A

Busseret, C

Guillot, G

Bremond, G

Gonzalez, O

Garrido, B

Morante, JR

机构：

[1] Inst Natl Sci Appl, Phys Mat Lab, CNRS, UMR 5511, F-69621 Villeurbanne, France

[2] Univ Barcelona, Dept Elect, Barcelona 08028, Spain

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

silicon nanocrystals; electrical transport; electroluminescence;

D O I：

10.1016/S1386-9477(02)00883-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present photoluminescence (PL) and electroluminescence studies on thermal SiO2 Si-implanted light-emitting devices (LEDs) containing crystallites of size 3 nm. The PL measurements reveal a bulk-type behavior of nc-Si-associated PL confirming that the PL obtained at similar to 1.6 eV is closely related to Q-confined nc-Si. Analysis of electrical transport mechanisms confirms that the current is related to a tunneling process as expected and not to Fowler-Nordheim regime. Finally, threshold electric field for light emission obtained was as low as 5 NW/cm, confirming the real potential of a such Si-implanted material for LEDs based on Si. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：604 / 606

页数：3

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