Photothermal characterization of electrochemical etching processed n-type porous silicon

被引：59

作者：

Calderon, A

Alvardo-Gil, JJ

Gurevich, YG

Cruz-Orea, A

Delgadillo, I

Vargas, H

Miranda, LCM

机构：

[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07000, DF, Mexico

[2] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Programa Multidisciplinario Ciencias Aplicadas &, Mexico City 07000, DF, Mexico

[3] Univ Estadual Norte Fluminense, Lab Ciencias Fis, BR-28015620 Campos Dos Goytacazes, RJ, Brazil

[4] Inst Nacl Pesquisas Espaciais, Lab Sensores & Mat, BR-12243010 Sao Jose Dos Campos, SP, Brazil

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.79.5022

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated, The measurements were carried out using the open-cell photoacoustic technique; The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.

引用

页码：5022 / 5025

页数：4

共 21 条

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