Spin injection from (Ga,Mn)As into InAs quantum dots

被引：90

作者：

Chye, Y ^{[1
]}

White, ME ^{[1
]}

Johnston-Halperin, E ^{[1
]}

Gerardot, BD ^{[1
]}

Awschalom, DD ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.66.201301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is similar to1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.

引用

页码：2013011 / 2013014

页数：4

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