Network-Enhanced Photoresponse Time of Ge Nanowire Photodetectors

被引：65

作者：

Yan, Chaoyi ^{[1
]}

Singh, Nandan ^{[1
]}

Cai, Hui ^{[1
]}

Gan, Chee Lip ^{[1
]}

Lee, Pooi See ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 07期

关键词：

germanium nanowire; network; photoresponse time; photodetector; sensor; GERMANIUM NANOWIRES; ELECTRON-TRANSPORT; BUILDING-BLOCKS; SURFACE; ARRAYS; NANOBELTS; DEVICES; SENSORS;

D O I：

10.1021/am100321r

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrated that the photoresponse time of Ge nanowire (NW) photodetectors could be greatly improved by using percolated NW networks (instead of single NW) as the active detection channels. Although the reset time for single-NW devices was >70 s, a fast reset time <1 s was observed for NW-network devices. The enhancement was attributed to the barrier-dominated conductance for network devices, which was not available in single-NW devices. The network structures provide ideal alternative solutions to the conventional single-NW photodetectors, given their superior performances and low-cost fabrication processes.

引用

页码：1794 / 1797

页数：4

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