High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions

被引：23

作者：

Serikawa, T ^{[1
]}

Omata, F ^{[1
]}

机构：

[1] NTT, Cyber Space Labs, Musashino, Tokyo 1800012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 5A期

关键词：

polycrystalline Si; thin film transistors; low temperature process; sputtering; stainless-steel; poly-Si TFT;

D O I：

10.1143/JJAP.39.L393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High mobility n- and p-channel polycrystalline Si thin him transistors (poly-Si TFTs) are successfully fabricated on flexible stainless-steel foils through low-temperature processes (less than or equal to 200 degrees C). In the low-temperature process, all films in the poly-Si TFT including active Si and gate SiO2 films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. Resulting n- and p-channel poly-Si TFTs show excellent characteristics of mobility of 106 cm(2)/V.s and 66 cm(2)/V.s, respectively. Moreover, they shaw low off-currents of 1 x 10(-10) A and on/off current ratios as high as 1 x 10(6). Thus, these poly-Si TFTs are very promising for driver circuits and switching devices in novel flat panel displays of lightweight and mechanically strong liquid crystal displays and light emitting displays.

引用

页码：L393 / L395

页数：3

共 16 条

[1] Polysilicon thin film transistors fabricated on low temperature plastic substrates [J].

Carey, PG ;

Smith, PM ;

Theiss, SD ;

Wickboldt, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04) :1946-1949

[2]

DEMARAY E, 1999, P 6 INT DISPL WORKSH, P155

[3] Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films [J].

Giust, GK ;

Sigmon, TW ;

Carey, PG ;

Weiss, B ;

Davis, GA .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) :343-344

[4] Via hole technology for thin-film transistor circuits [J].

Gleskova, H ;

Wagner, S ;

Zhang, Q ;

Shen, DS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :523-525

[5]

GOSAIN DP, 1999, 1999 2NT WORKSH ACT, P239

[6] Low temperature fabrication of amorphous silicon thin film transistors by dc reactive magnetron sputtering [J].

McCormick, CS ;

Weber, CE ;

Abelson, JR ;

Davis, GA ;

Weiss, RE ;

Aebi, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (05) :2770-2776

[7]

OKAMOTO A, 1991, P MAT RES SOC S, V202, P223

[8]

OMATA F, 1999, 1999 INT WORKSH ACT, P887

[9] Resonant Raman scattering in polycrystalline silicon thin films [J].

Paillard, V ;

Puech, P ;

Laguna, MA ;

Temple-Boyer, P ;

Caussat, B ;

Couderc, JP ;

de Mauduit, B .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1718-1720

[10] XECL EXCIMER LASER ANNEALING USED TO FABRICATE POLY-SI TFTS [J].

SAMESHIMA, T ;

HARA, M ;

USUI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :1789-1793

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