Study of the electrical properties of thin film transistors based on nickel phthalocyanine

被引：2

作者：

BenChaabane, R ^{[1
]}

Guillaud, G ^{[1
]}

Gamoudi, M ^{[1
]}

机构：

[1] UNIV LYON 1,LAB ELECT SOLIDE,F-69622 VILLEURBANNE,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 296卷 / 1-2期

关键词：

electrical properties; thin film transistors; nickel phthalocyanine;

D O I：

10.1016/S0040-6090(96)09343-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabrication and characterization of Schottky gated and metal semiconductor field-effect transistors based on molecular materials have been reported. In this paper, we present results on the transient properties of thin film transistors. The presence of a delay time when drain voltage is applied is studied. A discussion about the functioning principle of this class of devices is presented. Finally, the effect of both environment and different film treatments on the electrical characteristics is also investigated. (C) 1997 Elsevier Science S.A.

引用

页码：145 / 147

页数：3

共 9 条

[1]

ADACHI M, 1990, SID 90, V21, P338

[2]

BURNS JR, 1969, RCA REV, V30, P15

[3] NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS [J].

BURROUGHES, JH ;

JONES, CA ;

FRIEND, RH .

NATURE, 1988, 335 (6186) :137-141

[4] THIN-FILM TRANSISTORS BASED ON NICKEL PHTHALOCYANINE [J].

GUILLAUD, G ;

MADRU, R ;

ALSADOUN, M ;

MAITROT, M .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4554-4556

[5] FIELD-EFFECT TRANSISTORS BASED ON INTRINSIC MOLECULAR SEMICONDUCTORS [J].

GUILLAUD, G ;

ALSADOUN, M ;

MAITROT, M ;

SIMON, J ;

BOUVET, M .

CHEMICAL PHYSICS LETTERS, 1990, 167 (06) :503-506

[6]

HOROWITZ G, 1990, J APPL PHYS, V67, P529

[7] FIELD-EFFECT TRANSISTOR WITH POLYTHIOPHENE THIN-FILM [J].

KOEZUKA, H ;

TSUMURA, A ;

ANDO, T .

SYNTHETIC METALS, 1987, 18 (1-3) :699-704

[8] SCHOTTKY DIODES USING POLY(3-HEXYLTHIOPHENE) [J].

KUO, CS ;

WAKIM, FG ;

SENGUPTA, SK ;

TRIPATHY, SK .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2957-2958

[9]

OHSHIMA H, 1989, IEDM TECH DIG, V89, P157

← 1 →