SCHOTTKY DIODES USING POLY(3-HEXYLTHIOPHENE)

被引：25

作者：

KUO, CS ^{[1
]}

WAKIM, FG ^{[1
]}

SENGUPTA, SK ^{[1
]}

TRIPATHY, SK ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS LOWELL,DEPT CHEM,LOWELL,MA 01854

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.355319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky barrier diodes have been fabricated using poly(3-hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3 at room temperature to form a p-type semiconductor. The Schottky junctions of In on FeCl3-doped P3HT using pressure contact exhibit rectification ratios ranging from 10(4):1 to 10(6):1 at a bias of +/- 1 V.

引用

收藏

页码：2957 / 2958

页数：2

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