Uniform and rapid nucleation of diamond via bias-assisted hot filament chemical vapor deposition

被引：5

作者：

Chen, Y ^{[1
]}

Chen, F ^{[1
]}

Wang, EG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1998.0017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new method was developed to obtain high density, uniform diamond nuclei via bias-assisted hot filament chemical vapor deposition, ii negative bias was applied between a mesh (installed above the filament) and the substrate to produce abundant uniform ions at the growth surface. Raman spectroscopy, scanning electron microscopy, and huger electron microscopy were used to analyze the films obtained. The results show that a layer of diamond film with a nucleation density of 10(9)/cm(2) can be obtained after 10 min deposition under 1 Torr.

引用

页码：126 / 130

页数：5

共 15 条

[1] SYNTHESIS OF DIAMOND FROM METHANE AND NITROGEN MIXTURE
BADZIAN, A
BADZIAN, T
LEE, ST
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3432 - 3434
[2] SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
CHEN, QJ
YANG, J
LIN, ZD
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1853 - 1855
[3] Chen Y., UNPUB
[4] GRIMSCH MH, 1991, PHYS REV B, V18, P90
[5] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER
HIMPSEL, FJ
KNAPP, JA
VANVECHTEN, JA
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1979, 20 (02): : 624 - 627
[6] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES
JIANG, X
KLAGES, CP
ZACHAI, R
HARTWEG, M
FUSSER, HJ
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3438 - 3440
[7] NUCLEATION AND INITIAL GROWTH-PHASE OF DIAMOND THIN-FILMS ON (100)-SILICON
JIANG, X
SCHIFFMANN, K
KLAGES, CP
[J]. PHYSICAL REVIEW B, 1994, 50 (12): : 8402 - 8410
[8] PLASMA-ENHANCED DIAMOND NUCLEATION ON SI
KATOH, M
AOKI, M
KAWARADA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (2A): : L194 - L196
[9] SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES
POPOVICI, G
CHAO, CH
PRELAS, MA
CHARLSON, EJ
MEESE, JM
[J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (08) : 2011 - 2016
[10] CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON BY INVACUO SURFACE-ANALYSIS AND TRANSMISSION ELECTRON-MICROSCOPY
STONER, BR
MA, GHM
WOLTER, SD
GLASS, JT
[J]. PHYSICAL REVIEW B, 1992, 45 (19): : 11067 - 11084

← 1 2 →