Realization and performance of thin SiO2/SiNx membrane for microheater applications

被引:118
作者
Rossi, C
Temple-Boyer, P
Esteve, D
机构
[1] CNRS, LAAS, F-31077 Toulouse 4, France
[2] Lab Fournier, F-21302 Chenove, France
关键词
microheaters; SiO2/SiN1.2; membranes; LPCVD SiNx deposits; intrinsic stress;
D O I
10.1016/S0924-4247(97)01627-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There is considerable interest in thin-film microheaters for decreasing the power consumption in portable applications. In this paper, we present the study of new stacked thin membranes (SiO2/SiN1.2) supporting the heating element (polysilicon resistor). The great interest of using SiN1.2 deposited onto a SiO2 layer is the improvement in mechanical properties of the membrane, leading to a fabrication yield very close to 100%. Microheaters fabricated with a 1.6 mm x 1.6 mm square and 0.7 mu m thick SiO2/SiN1.2 membrane give promising results in terms of power consumption; 230 degrees C is reached with an electrical power of 50 mW. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:241 / 245
页数:5
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