OPTICAL AND STRUCTURAL-PROPERTIES OF SIOX AND SINX MATERIALS

被引：82

作者：

DEHAN, E ^{[1
]}

TEMPLE-BOYER, P ^{[1
]}

HENDA, R ^{[1
]}

PEDROVIEJO, JJ ^{[1
]}

SCHEID, E ^{[1
]}

机构：

[1] UNIV BARCELONA, DEPT FIS APLICADA & ELECTR, LCMM, E-08028 BARCELONA, SPAIN

来源：

THIN SOLID FILMS | 1995年 / 266卷 / 01期

关键词：

OPTICAL PROPERTIES; SILICON NITRIDE; SILICON OXIDE; STRUCTURAL PROPERTIES;

D O I：

10.1016/0040-6090(95)06635-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiOx and SiNx films with varied stoichiometries were obtained by low-pressure chemical vapor deposition at low temperature from Si2H6/N2O and Si2H6/NH3, gas mixtures respectively. Using the Clausius-Mossoti theory and the Bruggeman expression, a relation between the refractive index and the stoichiometry of these two materials is established and corroborated by experiments thanks to X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, electron energy loss spectroscopy or/and the differential thickness method. These data have also been correlated in order to calculate the electronic polarizability of silicon atoms into SiOx and SiNx materials.

引用

页码：14 / 19

页数：6

共 21 条

[1] OPTICAL-PROPERTIES OF THIN-FILMS [J].

ASPNES, DE .

THIN SOLID FILMS, 1982, 89 (03) :249-262

[2] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .2. OPTICAL STUDIES OF THIN-FILMS [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA ;

LINDNER, JKN .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7690-7700

[3] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .3. INFRARED DIAGNOSIS OF THE POLYCRYSTALLINE-SI C-SI INTERFACE [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA ;

LINDNER, JKN .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7701-7707

[4] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .1. STRUCTURE, ELECTRONIC-PROPERTIES, AND ELECTRICAL-CONDUCTIVITY [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7677-7689

[5]

CAMPMANY J, 1992, MATER RES SOC S P, V258, P643

[6] ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

GYULAI, J ;

MEYER, O ;

MAYER, JW ;

RODRIGUE.V .

APPLIED PHYSICS LETTERS, 1970, 16 (06) :232-&

[7] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT [J].

HITCHMAN, ML ;

WIDMER, AE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :501-509

[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

HOLLINGER, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95

[9] X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION ON THE CHEMICAL-STRUCTURE OF AMORPHOUS-SILICON NITRIDE (A-SINX) [J].

INGO, GM ;

ZACCHETTI, N ;

DELLASALA, D ;

COLUZZA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (05) :3048-3055

[10]

LOPEZVILLEGAS JM, 1992, MATER RES SOC S P, V258, P655

← 1 2 3 →