Depth dependence of dislocation loop dissolution kinetics in ion implanted silicon

被引：4

作者：

Seibt, M ^{[1
]}

Huang, YL ^{[1
]}

Plikat, B ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37037 Gottingen, Germany

来源：

SOLID STATE PHENOMENA | 1997年 / 57-8卷

关键词：

silicon; ion-implantation; end-of range defects; Ostwald ripening;

D O I：

10.4028/www.scientific.net/SSP.57-58.377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated how annealing kinetics of dislocation loops in ion implanted silicon are affected by the proximity of the free wafer surface. We have used extrinsic {111} faulted loops produced by ion implantation and annealing which were placed at different depths below the wafer surface by chemical removal of surface layers of different thicknesses. The size distribution function as well as the location depth in the initial state and after additional annealing in vacuum have been measured by means of transmission electron microscopy. Our experimental data show a, pronounced effect of the proximity of the free wafer surface and quantitatively agree with a previously developed modified Ostwald ripening model.

引用

页码：377 / 382

页数：6

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