Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells

被引:6
作者
Herndon, MK [1 ]
Bradford, WC
Collins, RT
Hawkins, BE
Kuech, TF
Friedman, DJ
Kurtz, SR
机构
[1] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
[2] Univ Wisconsin, Dept Chem Engn, Madison, WI 53706 USA
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.126890
中图分类号
O59 [应用物理学];
学科分类号
摘要
Near-field scanning optical microscopy (NSOM) was used to study cleaved edges of GaAs solar cell devices. Using visible light for excitation, the NSOM acquired spatially resolved traces of the photocurrent response across the various layers in the device. For excitation energies well above the band gap, carrier recombination at the cleaved surface had a strong influence on the photocurrent signal. Decreasing the excitation energy, which increased the optical penetration depth, allowed the effects of surface recombination to be separated from collection by the pn junction. Using this approach, the NSOM measurements directly observed the effects of a buried minority carrier reflector/passivation layer. (C) 2000 American Institute of Physics. [S0003-6951(00)02227-0].
引用
收藏
页码:100 / 102
页数:3
相关论文
共 12 条
[1]  
[Anonymous], 21 IEEE PHOT SPEC C
[2]   COMBINED SHEAR FORCE AND NEAR-FIELD SCANNING OPTICAL MICROSCOPY [J].
BETZIG, E ;
FINN, PL ;
WEINER, JS .
APPLIED PHYSICS LETTERS, 1992, 60 (20) :2484-2486
[3]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[4]   GAS-ADSORPTION ON CLEAVED GAAS(110) SURFACES STUDIED BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].
LIEHR, M ;
LUTH, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1200-1206
[5]   MAJORITY AND MINORITY ELECTRON AND HOLE MOBILITIES IN HEAVILY DOPED GAAS [J].
LOWNEY, JR ;
BENNETT, HS .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7102-7110
[6]  
Lundstrom, 1993, MINORITY CARRIERS 3
[7]   ULTRALOW RECOMBINATION VELOCITY AT GA0.5IN0.5P/GAAS HETEROINTERFACES [J].
OLSON, JM ;
AHRENKIEL, RK ;
DUNLAVY, DJ ;
KEYES, B ;
KIBBLER, AE .
APPLIED PHYSICS LETTERS, 1989, 55 (12) :1208-1210
[8]   UNIFIED DEFECT MODEL AND BEYOND [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027
[9]   MATERIAL PROPERTIES OF P-TYPE GAAS AT LARGE DOPINGS [J].
TIWARI, S ;
WRIGHT, SL .
APPLIED PHYSICS LETTERS, 1990, 56 (06) :563-565
[10]   PARAMETER CONTROL, CHARACTERIZATION, AND OPTIMIZATION IN THE FABRICATION OF OPTICAL-FIBER NEAR-FIELD PROBES [J].
VALASKOVIC, GA ;
HOLTON, M ;
MORRISON, GH .
APPLIED OPTICS, 1995, 34 (07) :1215-1228