Fabrication of Si1-xGex alloy nanowire field-effect transistors

被引:51
作者
Kim, Cheol-Joo
Yang, Jee-Eun
Lee, Hyun-Seung
Jang, Hyun M.
Jo, Moon-Ho
Park, Won-Hwa
Kim, Zee Hwan
Maeng, Sunglyul
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Korea Univ, Dept Chem, Seoul 136701, South Korea
[3] Elect & Telecommun Res Inst, Cambridge ETRI Joint Res Ctr, Taejon 305700, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2753722
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors present the demonstration of nanowire field-effect transistors incorporating group IV alloy nanowires, Si1-xGex. Single-crystalline Si1-xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was reproducibly controlled in the whole composition range by controlling the kinetics of catalytic decomposition of precursors. Complementary in situ doping of Si1-xGex nanowires was achieved by PH3 and B2H6 incorporation during the synthesis for n- and p-type field-effect transistors. The availability of both n- and p-type Si1-xGex nanowire circuit components suggests implications for group IV semiconductor nanowire electronics and optoelectronics. (C) 2007 American Institute of Physics.
引用
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页数:3
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