Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

被引：63

作者：

Ko, T. S.

Wang, T. C.

Gao, R. C.

Chen, H. G.

Huang, G. S.

Lu, T. C.

Kuo, H. C.

Wang, S. C.

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 30050, Taiwan

[2] IShou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 02期

关键词：

X-ray diffraction; metal-organic chemical vapor deposition; nitrides;

D O I：

10.1016/j.jcrysgro.2006.12.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Non-polar a-plane (1 1 (2) over bar 0) GaN thin films were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 angstrom. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer. (c) 2007 Elsevier B.V. All rights reserved.

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收藏

页码：308 / 313

页数：6

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