Nanoparticle formation mechanism in CVD reactor with ionization of source vapor

A new chemical vapor deposition (CVD) method, called ionization CVD, was developed, to produce non-agglomerated nanoparticles in which reactant gases are charged. A sonic-jet corona discharger was used as an ionizer in the developed nanoparticle generator. For a tetraethylorthosilicate (TEOS)/O-2 chemical system, SiO2 nanoparticles were prepared. All particles formed by the ionization CVD were charged unipolarly. SEM micrographs of particles showed that the repulsive Coulombic force between charged particles reduces their coagulation rate and produces non-agglomerated nanoparticles that have a relatively high number concentration and small size. An external field was used to collect the charged particles onto Si wafers. These collected samples indicated that the deposition of charged particles could be controlled by the external electric field. Particle concentration measurement with a condensation nucleus counter at various TEOS concentrations suggested the particle formation mechanism in the ionization CVD was an ion-induced nucleation.