Transient-enhanced diffusion of boron in SiC

被引：15

作者：

Laube, M ^{[1
]}

Pensl, G ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

carbon/boron-coimplantation; kick-out mechanism; outdiffusion; SIMS;

D O I：

10.4028/www.scientific.net/MSF.338-342.941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The redistribution of implanted box-shaped and Pearson B profiles subsequent to annealing steps were studied in 6H-SiC by Secondary Ion Mass Spectrometry. The enhanced diffusion of B can strongly be suppressed by a surplus of carbon. During the annealing process a transient behavior of the B diffusion is observed.

引用

页码：941 / 944

页数：4

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