Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

被引：144

作者：

Leem, Dong-Seok

Park, Hyung-Dol

Kang, Jae-Wook

Lee, Jae-Hyun

Kim, Ji Whan

Kim, Jang-Joo ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, OLED Ctr, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期

关键词：

D O I：

10.1063/1.2754635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N '-diphenyl-N,N-'-bis (1,1 '-biphenyl)-4,4 '-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2-5.4 V and power efficiency of 2.2-2.3 lm/W at 20 mA/cm(2), which is significantly improved compared to those (7.1 V and 2.0 lm/W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices. (c) 2007 American Institute of Physics.

引用

页数：3

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