Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure

被引:25
作者
Wang, F [1 ]
Uusimaki, A
Leppavuori, S
Karmanenko, SF
Dedyk, AI
Sakharov, VI
Serenkov, IT
机构
[1] Univ Oulu, Microelect Lab, FIN-90570 Oulu, Finland
[2] Univ Oulu, EMPART, Res Grp Infotech Oulu, FIN-90570 Oulu, Finland
[3] St Petersburg Electrotech Univ, St Petersburg 197376, Russia
[4] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1557/JMR.1998.0177
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric Ba0.7Sr0.3TiO3 thin films were successfully deposited on sapphire (r-cut) substrates by the sol-gel process, and the deposited films were annealed at various temperatures and for various soaking times. The compositional and structural characteristics of the films were systematically examined with the aid of x-ray diffraction, scanning electron microscopy, and medium energy ion scattering techniques. Their dependence on thermal processes was investigated. A planar capacitor structure based on the BSTO films was fabricated to evaluate the electrical and dielectric performance. These results, together with the microstructure characteristics, were analyzed and an optimal process was finally established.
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收藏
页码:1243 / 1248
页数:6
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