Ultra high frequency static dividers >150 GHz in a narrow mesa InGaAs/InP DHBT technology

被引：15

作者：

Griffith, Z ^{[1
]}

Dahlström, M ^{[1
]}

Rodwell, MJW ^{[1
]}

Urteaga, M ^{[1
]}

Pierson, R ^{[1
]}

Rowell, P ^{[1
]}

Brar, B ^{[1
]}

Lee, S ^{[1
]}

Nguyen, N ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A static frequency divider with a maximum clock frequency > 150 GHz was designed and fabricated in a narrow mesa InP/In0.53Ga0.47As/InP DHBT technology. The divider operation is fully static, operating from f(clk) = 3 GHz to 152.0 GHz while dissipating 594.7 mW of power in the circuit core from a -4.07 Volt supply. The circuit employs single-buffered emitter coupled logic (ECL) and inductive peaking. The transistors have an emitter junction width of 0.5 mum and a 3.0 collector-to-emitter area ratio. A microstrip wiring environment is employed for high interconnect density, and to minimize resonances and impedance mismatch at frequencies > 100 GHz.

引用

页码：176 / 179

页数：4

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Ultra high frequency static dividers &gt;150 GHz in a narrow mesa InGaAs/InP DHBT technology

Ultra high frequency static dividers >150 GHz in a narrow mesa InGaAs/InP DHBT technology