Overview of phase-change chalcogenide nonvolatile memory technology

被引:208
作者
Hudgens, S [1 ]
Johnson, B [1 ]
机构
[1] Intel Corp, Santa Clara, CA 95051 USA
关键词
chalcogenides; nonvolatile memory; phase change;
D O I
10.1557/mrs2004.236
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phase-change nonvolatile semiconductor memory technology is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase-change process in multicomponent chalcogenide alloy materials similar to those used in rewriteable optical disks. Long cycle life, low programming energy, and excellent scaling characteristics are advantages that make phase-change semiconductor memory a promising candidate to replace flash memory in future applications. Phase-change technology is being commercialized by a number of semiconductor manufacturers. Fundamental processes in phase-change semiconductor memory devices, device performance characteristics, and progress toward commercialization of the technology are reviewed.
引用
收藏
页码:829 / 832
页数:4
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