Landau theory of domain wall magnetoelectricity

被引：125

作者：

Daraktchiev, Maren ^{[1
,2
]}

Catalan, Gustau ^{[1
,3
,4
]}

Scott, James F. ^{[1
,5
]}

机构：

[1] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England

[2] Dept Hlth, London SE1 8UG, England

[3] Campus Univ Autonoma Barcelona, ICREA, Bellaterra 08193, Spain

[4] Campus Univ Autonoma Barcelona, CSIC ICN, CIN2, Bellaterra 08193, Spain

[5] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 22期

关键词：

THIN-FILM HETEROSTRUCTURES; SCALAR FIELD-THEORIES; MULTIFERROICS; SOLITONS; BAMNF4;

D O I：

10.1103/PhysRevB.81.224118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the exact analytical solution to the domain wall properties in a generic multiferroic system with two order parameters that are coupled biquadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films of this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magnetoelectric devices based on domain walls rather than bulk properties.

引用

页数：12

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