学术探索
学术期刊
新闻热点
数据分析
智能评审

Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition

被引：69
作者：
Milne, WI
Teo, KBK
Chhowalla, M
Amaratunga, GAJ
Lee, SB
Hasko, DG
Ahmed, H
Groening, O
Legagneux, P
Gangloff, L
Schnell, JP
Pirio, G
Pribat, D
Castignolles, M
Loiseau, A
Semet, V
Binh, VT
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Cambridge, Cavendish Lab, Ctr Microelect Res, Cambridge CB2 1PZ, England
[3] Univ Fribourg, CH-1700 Fribourg, Switzerland
[4] Thales Res & Technol, Orsay, France
[5] Univ Montpellier, Montpellier, France
[6] Off Natl Etud & Rech Aerosp, CNRS, Montpellier, France
[7] Univ Lyon, Lyon, France
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 3-7期
关键词：
nanotubes; electrical characterisation; field emission; plasma chemical vapour deposition;
D O I：
10.1016/S0925-9635(02)00292-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kOmega/mum length (resistivity 10(-6) to 10(-5) Omega m) and have a maximum current carrying capability of 0.2-2 mA (current density 10(7)-10(8) A/cm(2)). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of similar to10 muA were obtained. The failure of nanotubes under field emission is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：422 / 428
页数：7
相关论文
共 29 条
[1]   Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains [J].
Andrienko, I ;
Cimmino, A ;
Hoxley, D ;
Prawer, S ;
Kalish, R .
APPLIED PHYSICS LETTERS, 2000, 77 (08) :1221-1223
[2]   Field emission from isolated individual vertically aligned carbon nanocones [J].
Baylor, LR ;
Merkulov, VI ;
Ellis, ED ;
Guillorn, MA ;
Lowndes, DH ;
Melechko, AV ;
Simpson, ML ;
Whealton, JH .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4602-4606
[3]   Field emission from cylindrical carbon nanotube cathodes:: Possibilities for luminescent tubes [J].
Bonard, JM ;
Stöckli, T ;
Noury, O ;
Chatelain, A .
APPLIED PHYSICS LETTERS, 2001, 78 (18) :2775-2777
[4]   Field emission of individual carbon nanotubes in the scanning electron microscope [J].
Bonard, JM ;
Dean, KA ;
Coll, BF ;
Klinke, C .
PHYSICAL REVIEW LETTERS, 2002, 89 (19) :1-197602
[5]  
*CHEM RUBB CORP, 1983, CRC HDB CHEM PHYS
[6]   Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition [J].
Chhowalla, M ;
Teo, KBK ;
Ducati, C ;
Rupesinghe, NL ;
Amaratunga, GAJ ;
Ferrari, AC ;
Roy, D ;
Robertson, J ;
Milne, WI .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5308-5317
[7]   Fully sealed, high-brightness carbon-nanotube field-emission display [J].
Choi, WB ;
Chung, DS ;
Kang, JH ;
Kim, HY ;
Jin, YW ;
Han, IT ;
Lee, YH ;
Jung, JE ;
Lee, NS ;
Park, GS ;
Kim, JM .
APPLIED PHYSICS LETTERS, 1999, 75 (20) :3129-3131
[8]   Electrophoresis deposition of carbon nanotubes for triode-type field emission display [J].
Choi, WB ;
Jin, YW ;
Kim, HY ;
Lee, SJ ;
Yun, MJ ;
Kang, JH ;
Choi, YS ;
Park, NS ;
Lee, NS ;
Kim, JM .
APPLIED PHYSICS LETTERS, 2001, 78 (11) :1547-1549
[9]   Carbon nanotube electron emitters with a gated structure using backside exposure processes [J].
Chung, DS ;
Park, SH ;
Lee, HW ;
Choi, JH ;
Cha, SN ;
Kim, JW ;
Jang, JE ;
Min, KW ;
Cho, SH ;
Yoon, MJ ;
Lee, JS ;
Lee, CK ;
Yoo, JH ;
Kim, JM ;
Jung, JE ;
Jin, YW ;
Park, YJ ;
You, JB .
APPLIED PHYSICS LETTERS, 2002, 80 (21) :4045-4047
[10]   Electrical conductivity of individual carbon nanotubes [J].
Ebbesen, TW ;
Lezec, HJ ;
Hiura, H ;
Bennett, JW ;
Ghaemi, HF ;
Thio, T .
NATURE, 1996, 382 (6586) :54-56
123