Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

被引：82

作者：

Batista, J ^{[1
]}

Mandelis, A ^{[1
]}

Shaughnessy, D ^{[1
]}

机构：

[1] Univ Toronto, Ctr Adv Diffus Wave Technol, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 23期

关键词：

D O I：

10.1063/1.1582376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T)similar toT(-1.5)], and the temperature dependence of carrier mobility is mu(T) = (1.06+/-60.07) x 10(9) x T-2.49+/-0.01 cm(2)/Vs. (C) 2003 American Institute of Physics.

引用

页码：4077 / 4079

页数：3

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