Blue-light emission from sputtered Si:SiO2 films without annealing

被引：36

作者：

Hanaizumi, O ^{[1
]}

Ono, K ^{[1
]}

Ogawa, Y ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1539302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed a photoluminescence (PL) spectrum at room temperature that had a peak with full width of half maximum (FWHM) of 0.38 eV near the band gap energy of 3.2 eV from a Si:SiO2 sputtered film without annealing. Blue-light emission could be seen by the naked eye. A low-intensity PL peak with FWHM of 0.20 eV was also observed at around 1.6 eV. We have already demonstrated that our method automatically forms Si clusters contributing to visible emission. Our results did not contradict the well-founded conjecture that there were two mechanisms of emission from Si clusters: emission at 1.6-1.7 eV due to the surface state of the oxidized Si nanocrystals and emission at the band gap energy originating from the quantum confinement effect. (C) 2003 American Institute of Physics.

引用

页码：538 / 540

页数：3

共 19 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[3] Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer containing silicon nanocrystals [J].

Fujita, S ;

Sugiyama, N .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :308-310

[4] Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode [J].

Gelloz, B ;

Koshida, N .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) :4319-4324

[5] Fabrication and assessment of sputtered Si:SiO2 films emitting white light without annealing [J].

Hanaizumi, O ;

Ono, K ;

Ogawa, Y ;

Koga, T ;

Hasegawa, Y ;

Ogihara, A ;

Saito, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (10A) :L1084-L1087

[6] Introducing CdS into two- and three-dimensional photonic crystals [J].

Hanaizumi, O ;

Saito, M ;

Ohtera, Y ;

Kawakami, S ;

Yano, S ;

Segawa, Y ;

Kuramochi, E ;

Tamamura, T ;

Oku, S ;

Ozawa, A .

OPTICAL AND QUANTUM ELECTRONICS, 2002, 34 (1-3) :71-77

[7]

HASHIMOTO T, 2001, 2001 INT C SOL STAT

[8] Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].

Hirschman, KD ;

Tsybeskov, L ;

Duttagupta, SP ;

Fauchet, PM .

NATURE, 1996, 384 (6607) :338-341

[9] Structured films of light-emitting silicon nanoparticles produced by cluster beam deposition [J].

Huisken, F ;

Kohn, B ;

Paillard, V .

APPLIED PHYSICS LETTERS, 1999, 74 (25) :3776-3778

[10] VISIBLE PHOTOLUMINESCENCE FROM OXIDIZED SI NANOMETER-SIZED SPHERES - EXCITON CONFINEMENT ON A SPHERICAL-SHELL [J].

KANEMITSU, Y ;

OGAWA, T ;

SHIRAISHI, K ;

TAKEDA, K .

PHYSICAL REVIEW B, 1993, 48 (07) :4883-4886

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