Improvement of the photoluminescence dead layer model in III-V semiconductors

被引：1

作者：

Hellouin, Y ^{[1
]}

Viktorovitch, P ^{[1
]}

机构：

[1] Ecole Cent Lyon, Elect Lab, CNRS, UMR 5512, F-69131 Ecully, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 02期

关键词：

photoluminescence; dead layer model; surface recombination velocity; III-V compound semiconductors; recombination processes;

D O I：

10.1143/JJAP.37.466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the photoluminescence (PL) dead layer model, which is widely used in the literature to fit the variations of the room temperature PL intensity versus the surface recombination velocity of III-V compound semiconductor materials, may not be suitable to practical experimental condition. It is proposed a simple analytical derivation of the PL yield which includes the contribution of radiative recombination in the near surface field region.

引用

页码：466 / 470

页数：5

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