Organic semiconducting oligomers for use in thin film transistors

被引:1729
作者
Murphy, Amanda R.
Frechet, Jean M. J.
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1021/cr0501386
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
For use in high performance thin film transistors, the semiconducting material must have high carrier mobility, form crystalline films whose conductive axes re aligned between the source and drain electrodes and be processable. Changes at the molecular level significantly affect all of these parameters, giving the chemist an unprecedented degree of flexibility in materials design. This review introduces a number of different materials systems into thin film transistor structures. Focus is on the fabrication of thin film transistor structures and the characterization methods used for both devices and thin films. A wide range of molecular and oligomeric organic compounds in transistor structures are also covered, highlighting the advances that have been made in achieving high mobility materials.
引用
收藏
页码:1066 / 1096
页数:31
相关论文
共 297 条
[101]   Growth conditions effects on morphology and transport properties of an oligothiophene semiconductor [J].
Hajlaoui, ME ;
Garnier, F ;
Hassine, L ;
Kouki, F ;
Bouchriha, H .
SYNTHETIC METALS, 2002, 129 (03) :215-220
[102]   Organic transistors using alpha-octithiophene and alpha,omega-dihexyl-alpha-octithiophene: Influence of oligomer length versus molecular ordering on mobility [J].
Hajlaoui, R ;
Fichou, D ;
Horowitz, G ;
Nessakh, B ;
Constant, M ;
Garnier, F .
ADVANCED MATERIALS, 1997, 9 (07) :557-&
[103]   Improved field-effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene [J].
Hajlaoui, R ;
Horowitz, G ;
Garnier, F ;
ArceBrouchet, A ;
Laigre, L ;
ElKassmi, A ;
Demanze, F ;
Kouki, F .
ADVANCED MATERIALS, 1997, 9 (05) :389-&
[104]   Relationship between molecular structure and electrical performance of oligothiophene organic thin film transistors [J].
Halik, M ;
Klauk, H ;
Zschieschang, U ;
Schmid, G ;
Ponomarenko, S ;
Kirchmeyer, S ;
Weber, W .
ADVANCED MATERIALS, 2003, 15 (11) :917-+
[105]   High-mobility organic thin-film transistors based on α,α′-didecyloligothiophenes [J].
Halik, M ;
Klauk, H ;
Zschieschang, U ;
Schmid, G ;
Radlik, W ;
Ponomarenko, S ;
Kirchmeyer, S ;
Weber, W .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2977-2981
[106]   Molecular engineering of band level energies in oligothiophenes, through cyano-substitutions [J].
Hapiot, P ;
Demanze, F ;
Yassar, A ;
Garnier, F .
JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (20) :8397-8401
[107]   Stable polythiophene semiconductors incorporating thieno[2,3-b]thiophene [J].
Heeney, M ;
Bailey, C ;
Genevicius, K ;
Shkunov, M ;
Sparrowe, D ;
Tierney, S ;
McCulloch, I .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (04) :1078-1079
[108]   Growth dynamics of pentacene thin films [J].
Heringdorf, FJMZ ;
Reuter, MC ;
Tromp, RM .
NATURE, 2001, 412 (6846) :517-520
[109]  
Herwig PT, 1999, ADV MATER, V11, P480, DOI 10.1002/(SICI)1521-4095(199904)11:6<480::AID-ADMA480>3.0.CO
[110]  
2-U