Organic semiconducting oligomers for use in thin film transistors

被引:1729
作者
Murphy, Amanda R.
Frechet, Jean M. J.
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1021/cr0501386
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
For use in high performance thin film transistors, the semiconducting material must have high carrier mobility, form crystalline films whose conductive axes re aligned between the source and drain electrodes and be processable. Changes at the molecular level significantly affect all of these parameters, giving the chemist an unprecedented degree of flexibility in materials design. This review introduces a number of different materials systems into thin film transistor structures. Focus is on the fabrication of thin film transistor structures and the characterization methods used for both devices and thin films. A wide range of molecular and oligomeric organic compounds in transistor structures are also covered, highlighting the advances that have been made in achieving high mobility materials.
引用
收藏
页码:1066 / 1096
页数:31
相关论文
共 297 条
[61]   Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed [J].
DeLongchamp, DM ;
Vogel, BM ;
Jung, Y ;
Gurau, MC ;
Richter, CA ;
Kirillov, OA ;
Obrzut, J ;
Fischer, DA ;
Sambasivan, S ;
Richter, LJ ;
Lin, EK .
CHEMISTRY OF MATERIALS, 2005, 17 (23) :5610-5612
[62]   Structural effects on the characteristics of organic field effect transistors based on new oligothiophene derivatives [J].
Deman, AL ;
Tardy, J ;
Nicolas, Y ;
Blanchard, P ;
Roncali, J .
SYNTHETIC METALS, 2004, 146 (03) :365-371
[63]   Electrcal properties of cyano-substituted oligothiophenes towards n-type organic semiconductors [J].
Demanze, F ;
Yassar, A ;
Fichou, D .
SYNTHETIC METALS, 1999, 101 (1-3) :620-621
[64]  
Dimitrakopoulos CD, 2003, THIN-FILM TRANSISTORS, P333
[65]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[66]  
2-9
[67]   Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J].
Dimitrakopoulos, CD ;
Purushothaman, S ;
Kymissis, J ;
Callegari, A ;
Shaw, JM .
SCIENCE, 1999, 283 (5403) :822-824
[68]   Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator [J].
Dimitrakopoulos, CD ;
Furman, BK ;
Graham, T ;
Hegde, S ;
Purushothaman, S .
SYNTHETIC METALS, 1998, 92 (01) :47-52
[69]   trans-trans-2,5-bis-[2-{5-(2,2'-bithienyl)}ethenyl] thiophene: synthesis, characterization, thin film deposition and fabrication of organic field-effect transistors [J].
Dimitrakopoulos, CD ;
AfzaliArdakani, A ;
Furman, B ;
Kymissis, J ;
Purushothaman, S .
SYNTHETIC METALS, 1997, 89 (03) :193-197
[70]   Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors [J].
Dinelli, F ;
Murgia, M ;
Biscarini, F ;
De Leeuw, DM .
SYNTHETIC METALS, 2004, 146 (03) :373-376