Noble metal silicide formation in metal/Si structures during oxygen annealing: Implications for perovskite-based memory devices

被引:14
作者
Saenger, KL [1 ]
Grill, A [1 ]
Cabral, C [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1557/JMR.1998.0060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper investigates the potentially undesirable noble metal silicide formation reactions that may occur in noble metal electrodes deposited directly on silicon without an intervening diffusion barrier. Metal (90-100 nm)/Si structures of Pt/Si, Rh/Si, Ir/Si, and Ir/Ti/Si were annealed in oxygen or nitrogen ambients at temperatures of 640-700 degrees C. Metal/silicon reactions and phase formation were studied by Rutherford Backscattering Spectroscopy, x-ray diffraction, and electrical resistance measurements. While complete silicidation was observed in the Ph/Si, Pt/Si, and Ir/Si samples after 640 degrees C/6 min anneals in nitrogen, some Pt and most of the Ir remained after equivalent anneals in oxygen. More detailed studies of the Ir/Si samples indicated that some Ir is left unsilicided even after a 700 degrees C/6 min anneal in O-2, and that the iridium silicide formed is the semiconducting IrSi1.75. The formation of this silicide can be delayed, but not prevented, with the use of a 5 nm Ti adhesion layer between the Ir and Si.
引用
收藏
页码:462 / 468
页数:7
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