THIN-FILM FORMATION OF RHODIUM SILICIDES

被引：41

作者：

PETERSSON, S ^{[1
]}

ANDERSON, R ^{[1
]}

BAGLIN, J ^{[1
]}

DEMPSEY, J ^{[1
]}

HAMMER, W ^{[1
]}

DHEURLE, F ^{[1
]}

LAPLACA, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：373 / 382

页数：10

相关论文

共 32 条

[1] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 285 - 287
[2] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS
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[3] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
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[4] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT
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DEMPSEY, J
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661
[5] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[6] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES
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MOSS, SC
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &
[7] FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS
CANALI, C
CATELLANI, F
OTTAVIANI, G
PRUDENZIATI, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 187 - 190
[8] PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION
CANALI, C
MAJNI, G
OTTAVIANI, G
CELOTTI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 255 - 258
[9] CANALI C, 1978, THIN FILM PHENOMENA, P38
[10] COE DJ, 1974, METAL SEMICONDUCTOR, P74

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