Photo-Thermoelectric Effect at a Graphene Interface Junction

被引:529
作者
Xu, Xiaodong [1 ]
Gabor, Nathaniel M. [1 ,2 ]
Alden, Jonathan S. [2 ]
van der Zande, Arend M. [2 ]
McEuen, Paul L. [1 ,2 ]
机构
[1] Cornell Univ, Ctr Nanoscale Syst, Ithaca, NY 14853 USA
[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
关键词
Graphene; photocurrent; photo-thermoelectric effect;
D O I
10.1021/nl903451y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigate the optoelectronic response of a graphene single-bilayer interface junction using phococurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photothermoelectric effect. The PC displays a factor of similar to 10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T-1,T-5 dependence below similar to 100 K, which agrees with recent theoretical predictions.
引用
收藏
页码:562 / 566
页数:5
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