Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation

被引：10

作者：

Mei, YF

Fu, RKY

Siu, GG

Chu, PK

Li, ZM

Yang, CL

Ge, WK

Tang, ZK

Cheung, WY

Wong, SP

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2004年 / 7卷 / 4-6期

关键词：

ZnO; annealing; photoluminescence;

D O I：

10.1016/j.mssp.2004.09.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality (100) ZnO films with smooth surface topography have been synthesized on Si substrate by plasma immersion ion implantation. The materials exhibit compressive stress because of room temperature growth. After annealing at different temperatures, various visible photoluminescence bands are observed. The optical phenomenon as well as the transition mechanism which may involve defects such as [Zn-1], [V-Zn], and [O-i(-)] induced by the high substrate bias are discussed in this paper. (C) 2004 Elsevier Ltd. All rights reserved.

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收藏

页码：459 / 462

页数：4

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