Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping

被引：61

作者：

Xie, H. ^{[1
,2
,3
]}

Alves, H. ^{[4
]}

Morpurgo, A. F. ^{[2
,3
]}

机构：

[1] Delft Univ Technol, Kavli Inst NanoSci, NL-2628 CJ Delft, Netherlands

[2] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[3] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

[4] INESC MN & IN, P-1000029 Lisbon, Portugal

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 24期

关键词：

carrier density; organic field effect transistors; organic semiconductors; semiconductor device models; FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; CHARGE-TRANSPORT; ELECTRONIC TRANSPORT; HOLE MOBILITY; PENTACENE; SEMICONDUCTORS; TETRACENE; DIELECTRICS;

D O I：

10.1103/PhysRevB.80.245305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We present a simple, well-defined model based on physical parameters and we successfully reproduce quantitatively the device properties as a function of temperature and carrier density. The analysis allows its internal consistency to be checked, and enables the reliable extraction of the density and characteristic energy of shallow and deep traps in the material. Our findings provide indications as to the origin of shallow traps in TMTSF transistors.

引用

页数：7

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