Scanning tunneling microscopy study on the surface and interface of Si(111)/SiO2 structures

被引:29
作者
Fujita, K [1 ]
Watanabe, H [1 ]
Ichikawa, M [1 ]
机构
[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan
关键词
D O I
10.1063/1.366579
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning tunneling microscopy was used to investigate the surface and interface of Si(111)/SiO2 structures. The oxide thickness ranged from 0.3 to 1.7 nm. The surface was observed using a sample bias larger than 4.0 V. Fourier transform spectra of the surface images showed clear seventh order spots originating from the Si(111)7 X 7 reconstruction, indicating that 2.7 nm periodicity of the reconstruction remains on the oxide surface. At a sample bias of less than 4.0 V, a Si(111)/SiO2 interface was observed when 0.3-nm-thick oxide was partially left on the Si surface. (C) 1998 American Institute of Physics. [S0021-8979(98)00807-X].
引用
收藏
页码:3638 / 3642
页数:5
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