THE INITIAL-STAGES OF THE THERMAL-OXIDATION OF SI(001) 2X1 SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：5

作者：

UDAGAWA, M ^{[1
]}

NIWA, M ^{[1
]}

SUMITA, I ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 12期

关键词：

D O I：

10.1063/1.351912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of the thermal oxidation of Si(001) 2 X 1 surface were studied by scanning tunneling microscopy. The O2 exposure at 600-degrees-C produced Si islands and initial forms of oxides. The oxides appeared as "dark sites," "sequence of dots," and "dots with dark surroundings." Among the oxides, most of the dark sites were removed by the successive heating at 600-degrees-C, while the sequence of dots and the dots with dark surroundings remained. All the oxides were removed by the successive heating at 800-degrees-C. The thermal oxidation of Si(001) 2 X 1 surface is discussed in terms of these sites.

引用

页码：6017 / 6019

页数：3

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