Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

被引：93

作者：

Paskov, PP ^{[1
]}

Holtz, PO

Monemar, B

Garcia, JM

Schoenfeld, WV

Petroff, PM

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states. (C) 2000 American Institute of Physics. [S0003- 6951(00)02232-4].

引用

页码：812 / 814

页数：3

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