Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

被引：25

作者：

Horvath, ZJ

Adam, M

Ducso, C

Pinter, I

Van Tuyen, V

Barsony, I

Gombia, E

Mosca, R

Makaro, Z

机构：

[1] Hungarian Acad Sci, Tech Phys Res Inst, H-1325 Budapest, Hungary

[2] Hungarian Acad Sci, Res Inst Mat Sci, KFKI, H-1525 Budapest, Hungary

[3] CNR, Inst Maspec, I-43100 Parma, Italy

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 02期

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1016/S0038-1101(97)00235-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：221 / 228

页数：8

共 56 条

[1] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100) [J].