Simulation and correction of geometric distortions in scanning Kelvin probe microscopy

被引:40
作者
Efimov, A
Cohen, SR
机构
[1] Silicon MDT, Moscow 103305, Russia
[2] Weizmann Inst Sci, Dept Chem Serv, IL-76100 Rehovot, Israel
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 04期
关键词
D O I
10.1116/1.582472
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Capacitance due to geometric influence of the finite tip shape and influence of distant surface points can lead to artifacts in scanning Kelvin probe microscopy (SKPM) images. These artifacts appear as features in the SKPM image which are due only to tip/surface geometry and not to true surface potential variations. They can also cause blurring of real features. Such effects are most prominent for samples with rich topography. We present here a method for identifying and removing these artifacts, and demonstrate it for a gold sample with rich topography relative to the nearly flat surface potential fluctuations. (C) 2000 American Vacuum Society. [S0734-2101(00)11104-2].
引用
收藏
页码:1051 / 1055
页数:5
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