Accommodation of coherency strain by interfacial disconnections at a 90° ⟨110⟩ grain boundary in gold

被引:17
作者
Medlin, DL [1 ]
Cohen, D
Pond, RC
机构
[1] Sandia Natl Labs, Thin Film & Interface Sci Dept, Livermore, CA 94551 USA
[2] Univ Liverpool, Dept Mat Engn, Liverpool L69 3BX, Merseyside, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1080/0950083031000091461
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure of interfacial disconnections (i.e. line defects possessing both step and dislocation character) at a 90degrees [110] tilt boundary in gold has been investigated. High-resolution transmission electron microscopy observations identify these defects separating short (40-60 Angstrom) {111}-{112} terraces along the boundary. Because the ratio of the periodic length in the [111] direction to that in the [112] direction is irrational (2 1/2), the crystallography of this boundary is incommensurate. By measuring the dislocation content of the disconnections, it is shown how the defects accommodate the 5.7% 'misfit' in the directions parallel to the interface and thereby enable coherency to be achieved across the {111}-{112} terraces. This structural relaxation is markedly different from that at {100}-{110} grain boundary facets in this same system, for which previous observations have found an incoherent structure with no strain localization.
引用
收藏
页码:223 / 232
页数:10
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