1.42 μm continuous-wave operation of GaInNAs laser diodes

被引：27

作者：

Gollub, D

Moses, S

Fischer, M

Forchel, A

机构：

[1] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 10期

关键词：

D O I：

10.1049/el:20030532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave (CW) operation of GainNAs laser diodes in the 1.4 mum range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by W solid source molecular beam epitaxy. Threshold currents as low as 3: 0 66 mA and external efficiencies as high as 0.29 W/A could be demonstrated in CW operation. Lasing was observed up to 150degreesC and a characteristic temperature T-0 of I I I K was demonstrated. The emission wavelength at room temperature was centred at 1417 nm.

引用

页码：777 / 778

页数：2

共 14 条

[11] Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature [J].