Fatigue characteristics of SrBi2Ta2O9 thin films by RF magnetron sputtering method

Ferroelectric SrBi2Ta2O9 thin films were, synthesized on various substrates, such as MgO(100), glass, Pd/MgO(100) and Pd/glass by the rf magnetron sputtering method. Single-phase thin films were prepared on these substrates using a target with the starting chemical composition of SrCO3:Bi2O3:Ta2O5 = 0.7 : 1.2 : 1. At the higher substrate temperature of 1073 K, (h 0 I) orientation was found. The hysteresis loop of the thin film on Pd(100)/MgO(100) substrate did not change up to 10(9) switching cycles. These properties are very attractive for nonvolatile memory application.