In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

被引：14

作者：

Feld, SA ^{[1
]}

Loehr, JP

Sherriff, RE

Wiemeri, J

Kaspi, R

机构：

[1] Wright State Univ, Dayton, OH 45435 USA

[2] Av Directorate, Wright Patterson AFB, OH 45433 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 02期

关键词：

aluminum materials devices; dielectric materials devices; distributed Bragg reflector (DBR) lasers; optical materials devices; process control; process monitoring; semiconductor device fabrication; semiconductor lasers;

D O I：

10.1109/68.655356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To reproducibly define small features by oxidizing AlGaAs layers, it is essential to have good control over the oxidation reaction, We have integrated a glass viewport into a low-pressure (5 torr) cold-walled oxidation chamber to enable in situ optical monitoring of the sample during oxidation, To gain additional control, we reduced the oxidation temperature to 325 degrees C, consequently slowing the oxidation rate to 2 mu m/h, Realtime in situ optical measurements of AlAs oxidation rates were performed using this system and the results were compared with a standard model, Oxide-semiconductor distributed Bragg reflectors (DBR's) were also fabricated and measured, yielding highly reflective mirrors suitable for vertical-cavity surface-emitting laser (VCSEL) fabrication.

引用

页码：197 / 199

页数：3

共 18 条

[1] Wet oxidation of AlGaAs: The role of hydrogen [J].