High performance CW 1.26μm GaInNAsSb-SQW and 1.20μm GaInAsSb-SQW ridge lasers

被引：39

作者：

Shimizu, H ^{[1
]}

Kumada, K ^{[1
]}

Uchiyama, S ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 20期

关键词：

D O I：

10.1049/el:20001228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 mu m at room temperature. A low CW threshold current of 10.2mA and high characteristic temperature (T-0) of 146K were obtained for the GaInNAsSb lasers, which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore, the GaInAsSb lasers oscillated under CW operation at 1.20 mu m at room temperature. A low CW threshold current of 6.3mA and high characteristic temperature (T-0) of 256K were obtained for the GaInAsSb lasers, which is also the best result for 1.2 mu m-range highly strained GaInAs-based narrow-stripe lasers.

引用

页码：1701 / 1703

页数：3

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