Stokes shift in InGaN epitaxial layers

被引：23

作者：

Zheng, RS ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1323543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By analyzing the features of quasi-low-dimensional structures, we recognize that the Stokes shift is a characteristic of quantum-wire and quantum-disk systems. Including the smearing effect of the broad distribution of sizes of the nanostructures into consideration, we found that the Stokes shift is proportional to the light-emission peak energy of the systems. We propose that the Stokes shift observed in the optical spectra of InGaN epitaxial layers might originate from the self-formed quantum-wire and/or quantum-disk structures in the epitaxial layers. (C) 2000 American Institute of Physics. [S0003-6951(00)00745-2].

引用

页码：3024 / 3026

页数：3

共 18 条

[1]

[Anonymous], SEMICONDUCTOR BASIC

[2] Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering [J].

Behr, D ;

Wagner, J ;

Ramakrishnan, A ;

Obloh, H ;

Bachem, KH .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :241-243

[3] PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT [J].

BRUNNER, K ;

BOCKELMANN, U ;

ABSTREITER, G ;

WALTHER, M ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1992, 69 (22) :3216-3219

[4] Luminescences from localized states in InGaN epilayers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824

[5] Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J].

Chichibu, SF ;

Abare, AC ;

Minsky, MS ;

Keller, S ;

Fleischer, SB ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

Coldren, LA ;

DenBaars, SP ;

Sota, T .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2006-2008

[6]

CHICHIBU SF, 1997, APPL PHYS LETT, V71, P2364

[7]

GORONKIN H, 1999, NANOSTRUCTURE SCI TE, pCH5

[8] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[9] PHOTOEMISSION FROM ULTRATHIN METALLIC-FILMS - QUANTUM SIZE EFFECT, ELECTRON-SCATTERING, AND FILM STRUCTURE [J].

JALOCHOWSKI, M ;

KNOPPE, H ;

LILIENKAMP, G ;

BAUER, E .

PHYSICAL REVIEW B, 1992, 46 (08) :4693-4701

[10] Thermodynamic analysis of InxGa1-xN alloy composition grown by metalorganic vapor phase epitaxy [J].

Koukitu, A ;

Takahashi, N ;

Taki, T ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (6A) :L673-L675

← 1 2 →