Stokes shift in InGaN epitaxial layers

被引：23

作者：

Zheng, RS ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1323543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By analyzing the features of quasi-low-dimensional structures, we recognize that the Stokes shift is a characteristic of quantum-wire and quantum-disk systems. Including the smearing effect of the broad distribution of sizes of the nanostructures into consideration, we found that the Stokes shift is proportional to the light-emission peak energy of the systems. We propose that the Stokes shift observed in the optical spectra of InGaN epitaxial layers might originate from the self-formed quantum-wire and/or quantum-disk structures in the epitaxial layers. (C) 2000 American Institute of Physics. [S0003-6951(00)00745-2].

引用

页码：3024 / 3026

页数：3

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