Si/SiGe resonant-cavity photodiodes for optical storage applications

被引：4

作者：

Seto, M

de Boer, WB

Sinnis, VS

Morrison, AP

Hoekstra, W

de Jager, S

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[2] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a resonant cavity photodiode with a Si/SiGe Bragg mirror grown by low temperature chemical vapor deposition suitable for short wavelength detection around 600-700 nm. The presence of Fabry-Perot oscillations in the spectral response of the photodiode are indicative of its wavelength selectivity. (C) 1998 American Institute of Physics.

引用

页码：1550 / 1552

页数：3

共 8 条

[1] MULTILAYER REFLECTORS BY MOLECULAR-BEAM EPITAXY FOR RESONANCE ENHANCED ABSORPTION IN THIN HIGH-SPEED DETECTORS [J].