Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device

被引：41

作者：

Yoon, SM

Tokumitsu, E

Ishiwara, H

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

ferroelectric neuron circuit; adaptive-learning function; memory retention; SrBi2Ta2O9 thin film;

D O I：

10.1143/JJAP.39.2119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metal-ferroelectric-metal-oxide-semiconductor field effect transistor (MFMOS-FET) with a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure was fabricated on a silicon-on-insulator (SOI) structure in order to improve the memory retention characteristics of ferroelectric neuron circuit. The al ca ratio of MOS capacitor to MFM capacitor was changed from 3 to 15 so that charge quantities induced in both capacitors were optimized. It was found that the memory operations and retention characteristics were considerably improved in the fabricated MFMOS-FET with an area ratio larger than 10, compared with those of the MFSFET previously fabricated using a Pt/SrBi2Ta2O9/Si structure. Next, a pulse frequency modulation (PFM)-type neuron circuit was fabricated using the MFMOS-FET and a CMOS Schmitt-trigger oscillator as a synapse and a neuron, respectively, and it was found that the oscillation frequency of the circuit remained almost unchanged over a period of 1 h.

引用

页码：2119 / 2124

页数：6

共 14 条

[1] Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures [J].