Controllable graphene N-doping with ammonia plasma

被引：482

作者：

Lin, Yung-Chang ^{[1
]}

Lin, Chih-Yueh ^{[1
]}

Chiu, Po-Wen ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

annealing; charge exchange; doping profiles; graphene; narrow band gap semiconductors; nitrogen; plasma materials processing; semiconductor doping; ELECTRONIC-STRUCTURE; CARBON NANOTUBES; NITROGEN; TRANSISTOR; FILMS;

D O I：

10.1063/1.3368697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we show that gas-phase doping by means of NH3 plasma exposure is a highly flexible and manufacturable process for graphene electronics. The nitrogen-containing radicals can readily form covalent bonds with the carbon lattice and keep stable in the postannealing for damage restoration. The amount of charge transfer can be fine tuned by controlling the exposure time and monitored by the systematic shift in the Raman G mode and the G(ds)-V-g curves in transport measurements. The maximum doping level can reach 1.5x10(13) cm(-2).

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页数：3

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