A novel tool for mapping composition distributions in semiconductor microstructures-application to InxGa1-xP quantum wires

被引：6

作者：

Dua, P

Cooper, SL

Cheng, KY

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (similar to 150 Angstrom) InxGa1-xP multiquantum wire array grown via a strain-induced laterally ordered process. (C) 1998 American Institute of Physics.

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页码：1072 / 1074

页数：3

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