Electron screening in nanostructures

被引:20
作者
Achoyan, A.
Petrosyan, S.
Craig, W.
Ruda, H. E.
Shik, A. [1 ]
机构
[1] Russian Armenian State Univ, Yerevan 375051, Armenia
[2] McMaster Univ, Dept Math & Stat, Hamilton, ON L8S 4K1, Canada
[3] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2734954
中图分类号
O59 [应用物理学];
学科分类号
摘要
Distributions of electrical potential and carrier concentration, the contact capacity, and its voltage dependence are calculated for Schottky contacts to various types of nanostructures, including nanolayers and nanowires of different thickness, as well as their arrays. The results demonstrate a dramatic dependence on the nanostructure geometry. Single nanostructures and planar arrays of nanowires cannot provide effective screening of the contact potential, so that the total stored charge and the structure capacity depend on the separation between external contacts. On the contrary, for nanolayer and two-dimensional nanowire arrays, the mutual electrostatic interaction between different elements provides effective screening with the screening length equal to the interelement distance, which determines the contact capacity and its voltage dependence. (c) 2007 American Institute of Physics.
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页数:10
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