Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

被引：8

作者：

Li, G ^{[1
]}

Zohar, YS

Wong, M

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Engn Mech, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2004年 / 14卷 / 10期

关键词：

D O I：

10.1088/0960-1317/14/10/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compared to conventional polycrystalline silicon (poly-Si), high-temperature re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si has significantly improved material, mechanical and electrical properties, thus potentially allowing sensor and electronic integration on non-silicon-based substrates. In this paper, a RC-MILC poly-Si piezoresistive microphone with integrated amplifier has been designed, fabricated and tested. Measured results indicate an airborne sound sensitivity of 50 muV Pa-1 and a flat frequency response within +/-3 dB between 100 Hz and 8 kHz. Using RC-MILC poly-Si, piezoresistors with gauge factor improved about 25%, noise level reduced about 50% and transistors with performance approaching that of single-crystal silicon devices have been realized.

引用

页码：1352 / 1358

页数：7

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